? semiconductor components industries, llc, 2014 november, 2014 ? rev. 8 1 publication order number: BD809/d BD809(npn), bd810(pnp) plastic high power silicon transistors these devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. features ? high dc current gain ? these devices are pb?free and are rohs compliant* maximum ratings rating symbol value unit collector?emitter voltage v ceo 80 vdc collector?base voltage v cbo 80 vdc emitter?base voltage v ebo 5.0 vdc collector current i c 10 adc base current i b 6.0 adc total device dissipation @ t c = 25 c derate above 25 c p d 90 0.72 w w/ c operating and storage junction temperature range t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristics symbol max unit thermal resistance, junction?to?case r jc 1.39 c/w *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 10 ampere power transistors 80 volts 90 watts www.onsemi.com marking diagram bd8xx = device code x = 09 or 10 a = assembly location y = year ww = work week g = pb?free package bd8xxg ay ww device package shipping ordering information BD809g t o?220 (pb?free) 50 units/rail bd810g t o?220 (pb?free) 50 units/rail to?220 case 221a style 1 1 2 3 4 1 base emitter 3 collector 2, 4 1 base emitter 3 collector 2, 4 pnp npn
BD809 (npn), bd810 (pnp) www.onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit collector?emitter sustaining voltage (note 1) (i c = 0.1 adc, i b = 0) bv ceo 80 ? vdc collector cutoff current (v cb = 80 vdc, i e = 0) i cbo ? 1.0 madc emitter cutoff current (v be = 5.0 vdc, i c = 0) i ebo ? 2.0 madc dc current gain (i c = 2.0 a, v ce = 2.0 v) (i c = 4.0 a, v ce = 2.0 v) h fe 30 15 ? ? ? collector?emitter saturation voltage (note 1) (i c = 3.0 adc, i b = 0.3 adc) v ce(sat) ? 1.1 vdc base?emitter on voltage (note 1) (i c = 4.0 adc, v ce = 2.0 vdc) v be(on) ? 1.6 vdc current?gain bandwidth product (i c = 1.0 adc, v ce = 10 vdc, f = 1.0 mhz) f t 1.5 ? mhz product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse test: pulse width 300 s, duty cycle 2.0%. figure 1. active region dc safe operating area (see note on page 3) 10 v ce , collector-emitter voltage (volts) 3 1 0.1 3 10 30 100 0.3 i c , collector current (amp) dc 5 ms 1 1 ms .5 ms 1 ms 90 80 0 0 25 50 100 125 150 175 figure 2. power?temperature derating curve t c , case temperature ( c) p d , power dissipation (watts) 75 10 70 60 50 40 30 20 500 i c , collector current (amp) 0.5 0.2 10 1.0 2.0 100 50 h fe , dc current gain t j = 150 c 25 c -55 c 200 20 20 BD809 (npn) bd810 (pnp) i c , collector current (amp) h fe , dc current gain t j = 150 c 25 c -55 c 5.0 v ce = 2.0 v v ce = 2.0 v 10 5.0 0.5 0.2 10 1.0 2.0 20 5.0 500 100 50 200 20 5.0 10 figure 3. dc current gain
BD809 (npn), bd810 (pnp) www.onsemi.com 3 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) 5.0 100 i c = 1.0 a t j = 25 c 10 4.0 a 8.0 a 20 50 2000 1000 200 500 figure 4. collector saturation region 2.0 i b , base current (ma) 5.0 100 5000 1.8 1.6 1.4 1.2 i c = 1.0 a t j = 25 c 0 10 4.0 a 8.0 a 20 50 1.0 0.2 0.6 0.8 0.4 2000 1000 200 500 5000 2.0 1.8 1.6 1.4 1.2 0 1.0 0.2 0.6 0.8 0.4 i b , base current (ma) v ce(sat) @ i c /i b = 10 t j = 25 c v be @ v ce = 2.0 v 2.8 1.6 1.2 2.4 0 0.8 0.4 0.2 0.5 2.0 20 10 1.0 5.0 v be(sat) @ i c /i b = 10 2.0 i c , collector current (amp) v, voltage (volts) figure 5. ?on? voltages i c , collector current (amp) v, voltage (volts) v ce(sat) @ i c /i b = 10 t j = 25 c v be @ v ce = 2.0 v 2.8 1.6 1.2 2.4 0 0.8 0.4 0.2 0.5 2.0 20 10 1.0 5.0 v be(sat) = i c /i b = 10 2.0 figure 6. thermal response t, pulse width (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 r(t), normalized effective transient thermal resistance 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 20 30 50 100 200 300 100 0 500 jc (t) = r(t) jc d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.05 0.1 0.02 0.01 single pulse note: there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 1 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
BD809 (npn), bd810 (pnp) www.onsemi.com 4 package dimensions to?220 case 221a?09 issue ah notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 BD809/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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